HMC407 InGaP HBT Power Amplifier SMT, 5 - 7 GHz
The HMC407MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 5 and 7 GHz. The amplifier requires no external matching to achieve operation and is thus truly 50 Ohm matched at input and output. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. The amplifier provides 15 dB of gain, +29 dBm of saturated power at 28% PAE from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use.
Applications
Features and BenefitsGain: 15 dBSaturated Power: +29 dBm28% PAESupply Voltage: +5VPower Down CapabilityNo External Matching Required | S-Parameters |
Data Sheets
Application Notes
Order Information
| Part Number | Package | Packing Qty | Temp Range | Price 100-499 | Price 1000+ | RoHS |
|---|
| HMC407MS8G Production | 8 ld MSOP_EP | OTH 50 | -40 to 85C | 12.45 | 10.08 | N |
| HMC407MS8GE Production | 8 ld MSOP_EP | OTH 50 | -40 to 85C | 8.44 | 6.83 | Y |
| HMC407MS8GETR Production | 8 ld MSOP_EP | REEL 500 | -40 to 85C | 8.44 | 6.83 | Y |
| HMC407MS8GTR Production | 8 ld MSOP_EP | REEL 500 | -40 to 85C | 12.45 | 10.08 | N |
Evaluation Boards
| Part Number | Description | Price | RoHS |
|---|
| 104987-HMC407MS8G | Evaluation Board - HMC407MS8G Evaluation PCB | 332.2 | Y |
Reference Materials
