HMC408 1 Watt Power Amplifier SMT, 5.1 - 5.9 GHz
The HMC408LP3(E) is a 5.1 - 5.9 GHz high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) Power Amplifier MMIC which offers +30 dBm P1dB. The amplifier provides 20 dB of gain, +32.5 dBm of saturated power, and 27% PAE from a +5V supply voltage. The input is internally matched to 50 Ohms while the output requires a minimum of external components. Vpd can be used for full power down or RF output power/current control. The amplifier is packaged in a low cost, 3x3 mm leadless surface mount package with an exposed base for improved RF and thermal performance.
Applications
- 802.11a & HiperLAN WLAN
- UNII & Pt-to-Pt / Multi-Point Radios
- Access Point Radios
Features and BenefitsGain: 20 dBSaturated Power:
+32.5 dBm @ 27% PAESingle Supply Voltage: +5VPower Down Capability3x3 mm Leadless SMT Package | S-Parameters |
Data Sheets
Application Notes
Order Information
| Part Number | Package | Packing Qty | Temp Range | Price 100-499 | Price 1000+ | RoHS |
|---|
| HMC408LP3E Production | 16 ld QFN (3x3mm w/1.7mm ep) | OTH 50 | -40 to 85C | 6.6 | 5.35 | Y |
| HMC408LP3ETR Production | 16 ld QFN (3x3mm w/1.7mm ep) | REEL 500 | -40 to 85C | 6.6 | 5.35 | Y |
Evaluation Boards
| Part Number | Description | Price | RoHS |
|---|
| 105180-HMC408LP3 | Evaluation Board - HMC408LP3 Evaluation PCB | 274.99 | Y |
Reference Materials
