HMC415 InGaP HBT Power Amplifier SMT, 4.9 - 5.9 GHz
The HMC415LP3(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 4.9 and 5.9 GHz. The amplifier is packaged in a low cost, leadless surface mount package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20 dB of gain, +26 dBm of saturated power, and 34% PAE from a +3V supply voltage. Vpd can be used for full power down or RF output power/current control. For +15 dBm OFDM output power (64 QAM, 54 Mbps), the HMC415LP3(E) achieves an error vector magnitude (EVM) of 3.7% meeting 802.11a linearity requirements.
Applications
- 802.11a WLAN
- HiperLAN WLAN
- Access Points
- UNII & ISM Radios
Features and BenefitsGain: 20 dB34% PAE @ Psat = +26 dBm3.7% EVM @ Pout = +15 dBmwith 54 Mbps OFDM SignalSupply Voltage: +3 VPower Down CapabilityLow External Part Count | S-Parameters |
Data Sheets
Application Notes
Order Information
| Part Number | Package | Packing Qty | Temp Range | Price 100-499 | Price 1000+ | RoHS |
|---|
| HMC415LP3E Production | 16 ld QFN (3x3mm w/1.7mm ep) | OTH 50 | -40 to 85C | 8.62 | 6.98 | Y |
| HMC415LP3ETR Production | 16 ld QFN (3x3mm w/1.7mm ep) | REEL 500 | -40 to 85C | 8.62 | 6.98 | Y |
Evaluation Boards
| Part Number | Description | Price | RoHS |
|---|
| 105173-HMC415LP3 | Evaluation Board - HMC415LP3 Evaluation PCB | 347.13 | Y |
Reference Materials
