HMC455 ½ Watt High IP3 Amplifier SMT, 1.7 - 2.5 GHz
The HMC455LP3(E) is a high output IP3 GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1⁄2 watt MMIC amplifier operating between 1.7 and 2.5 GHz. Utilizing a minimum number of external components the amplifier provides 13 dB of gain and +28 dBm of saturated power at 56% PAE from a single +5 Vdc supply voltage. The high output IP3 of +42 dBm coupled with the low VSWR of 1.4:1 make the HMC455LP3(E) ideal driver amplifier for PCS/3G wireless infrastructures. A low cost, leadless 3x3 mm QFN surface mount package (LP3) houses the linear amplifier. The LP3 provides an exposed base for excellent RF and thermal performance.
Applications
Features and BenefitsOutput IP3: +42 dBmGain: 13 dB56% PAE @ +28 dBm Pout+19 dBm W-CDMA Channel Power @ -45 dBc ACP3x3 mm QFN SMT Package | S-Parameters |
Data Sheets
Application Notes
Order Information
| Part Number | Package | Packing Qty | Temp Range | Price 100-499 | Price 1000+ | RoHS |
|---|
| HMC455LP3E Production | 16 ld QFN (3x3mm w/1.7mm ep) | OTH 50 | -40 to 85C | 5.99 | 4.85 | Y |
| HMC455LP3ETR Production | 16 ld QFN (3x3mm w/1.7mm ep) | REEL 500 | -40 to 85C | 5.99 | 4.85 | Y |
Evaluation Boards
| Part Number | Description | Price | RoHS |
|---|
| 106058-HMC455LP3 | Evaluation Board - HMC455LP3 Evaluation PCB | 347.13 | Y |
Reference Materials
