HMC459-DIE Wideband Power Amplifier Chip, DC - 18 GHz
The HMC459 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 18 GHz. The amplifier provides 17 dB of gain, +31.5 dBm output IP3 and +25 dBm of output power at 1 dB gain compression while requiring 290 mA from a +8V supply. Gain flatness is good making the HMC459 ideal for EW, ECM and radar driver amplifier applications. The HMC459 amplifier I/O’s are internally matched to 50 Ohms facilitating easy integration into Multi-Chip-Modules (MCMs). All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils).
Applications
Features and BenefitsP1dB Output Power: +25 dBmGain: 17 dBOutput IP3: +31.5 dBmSupply Voltage: +8.0V @ 290 mA50 Ohm Matched Input/OutputDie Size: 3.12 x 1.63 x 0.1 mm | S-Parameters |
Data Sheets
Application Notes
Order Information
Part Number | Package | Packing Qty | Temp Range | Price 100-499 | Price 1000+ | RoHS |
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HMC459 Production | CHIPS OR DIE | OTH 10 | -55 to 85C | 117.11 | 94.86 | Y |
HMC459-SX Production | CHIPS OR DIE | OTH 2 | -55 to 85C | 0 | 0 | Y |
Reference Materials