HMC464-Die Wideband Power Amplifier Chip, 2 - 20 GHz
The HMC464 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between 2 and 20 GHz. The amplifier provides 16 dB of gain, +30 dBm Output IP3 and +26 dBm of output power at 1 dB gain compression while requiring 290 mA from a +8V supply. Gain flatness is excellent from 2 - 18 GHz making the HMC464 ideal for EW, ECM and radar driver amplifier applications. The HMC464 amplifier I/O’s are internally matched to 50 Ohms facilitating easy integration into Multi-Chip-Modules (MCMs). All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils).
Applications
- Telecom Infrastructure
- Microwave Radio & VSAT
- Military & Space
- Test Instrumentation
- Fiber Optics
Features and BenefitsP1dB Output Power: +26 dBmGain: 16 dBOutput IP3: +30 dBmSupply Voltage: +8V @ 290 mA50 Ohm Matched Input/OutputDie Size: 3.12 x 1.63 x 0.1 mm | S-Parameters |
Data Sheets
Application Notes
Order Information
| Part Number | Package | Packing Qty | Temp Range | Price 100-499 | Price 1000+ | RoHS |
|---|
| HMC464 Production | CHIPS OR DIE | OTH 10 | -55 to 85C | 155.29 | 131.29 | Y |
| HMC464-SX Production | CHIPS OR DIE | OTH 2 | -55 to 85C | 0 | 0 | Y |
Reference Materials
