HMC559-DIE Wideband Power Amplifier Chip, DC - 20 GHz
The HMC559 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 20 GHz. The amplifier provides 14 dB of gain, +36 dBm output IP3 and +28 dBm of output power at 1 dB gain compression while requiring 400 mA from a +10V supply. Gain flatness is slightly positive from 4 to 20 GHz making the HMC559 ideal for EW, ECM and radar driver amplifier applications. The HMC559 amplifier I/O’s are internally matched to 50 Ohms facilitating integration into Multi-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.075mm (3 mil) ribbon bonds of minimal length 0.31mm (12 mils).
Applications
Features and BenefitsP1dB Output Power: +28 dBmGain: 14 dBOutput IP3: +36 dBmSupply Voltage: +10V @ 400 mA50 Ohm Matched Input/OutputDie Size: 3.12 x 1.50 x 0.1 mm | S-Parameters |
Data Sheets
Application Notes
Order Information
| Part Number | Package | Packing Qty | Temp Range | Price 100-499 | Price 1000+ | RoHS |
|---|
| HMC559 Production | CHIPS OR DIE | OTH 10 | | 0 | 0 | Y |
| HMC559-SX Production | CHIPS OR DIE | OTH 2 | | 0 | 0 | Y |
Reference Materials
