HMC583 VCO SMT with Fo/2 & Divide-by-4, 11.5 - 12.8 GHz
The HMC583LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC583LP5(E) integrates resonators, negative resistance devices, varactor diodes and feature half frequency and divide-by-4 outputs. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +11 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.
Applications
Features and Benefits- Dual Output: Fo = 11.5 - 12.8 GHz
Fo/2 = 5.75 - 6.4 GHz - Pout: +11 dBm
- Phase Noise: -110 dBc/Hz @100 kHz Typ.
- No External Resonator Needed
- QFN Leadless SMT Package, 25 mm²
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Data Sheets
Order Information
| Part Number | Package | Packing Qty | Temp Range | Price 100-499 | Price 1000+ | RoHS |
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| HMC583LP5 Production | 32 ld QFN (5x5mm w/3.651mm ep) | OTH 50 | -40 to 85C | 28.19 | 21.56 | N |
| HMC583LP5E Production | 32 ld QFN (5x5mm w/3.651mm ep) | OTH 50 | -40 to 85C | 22.55 | 17.25 | Y |
| HMC583LP5ETR Production | 32 ld QFN (5x5mm w/3.651mm ep) | REEL 500 | -40 to 85C | 22.55 | 17.25 | Y |
Evaluation Boards
| Part Number | Description | Price | RoHS |
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| 110227-HMC583LP5 | Evaluation Board - HMC583LP5 Evaluation PCB | 456.32 | Y |
Reference Materials
