HMC632 VCO with Fo/2 & Divide-By-4 SMT, 14.25 - 15.65 GHz
The HMC632LP5(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC632LP5(E) integrates resonators, negative resistance devices, varactor diodes and features half frequency and divide-by-4 outputs. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +9 dBm typical from a +5V supply voltage. The prescaler and RF/2 functions can be disabled to conserve current if not required. The voltage controlled oscillator is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.
Applications
- Dual Output: Fo = 14.25 - 15.65 GHz
Fo/2 = 7.125 - 7.825 GHz
- Pout: +9 dBm
- Phase Noise: -107 dBc/Hz @ 100 kHz Typ.
- No External Resonator Needed
- QFN Leadless SMT Package, 25 mm²
Features and Benefits- Point to Point/Multipoint Radio
- Test Equipment & Industrial Controls
| |
Data Sheets
Order Information
| Part Number | Package | Packing Qty | Temp Range | Price 100-499 | Price 1000+ | RoHS |
|---|
| HMC632LP5E Production | 32 ld QFN (5x5mm w/3.651mm ep) | OTH 50 | -40 to 85C | 22.55 | 17.25 | Y |
| HMC632LP5ETR Production | 32 ld QFN (5x5mm w/3.651mm ep) | REEL 500 | -40 to 85C | 22.55 | 17.25 | Y |
Evaluation Boards
| Part Number | Description | Price | RoHS |
|---|
| 110227-HMC632LP5 | Evaluation Board - HMC632LP5 Evaluation PCB | 435.86 | Y |
Reference Materials
