HMC637A-Die GaAs MMIC 1 WATT POWER AMPLIFIER DC - 6 GHz _ BDTIC a Leading Distributor in China

HMC637A-Die GaAs MMIC 1 WATT POWER AMPLIFIER DC - 6 GHz

The HMC637A is a GaAs MMIC MESFET Distributed Power Amplifier die which operates between DC and 6 GHz. The amplifier provides 14 dB of gain, +41 dBm output IP3 and +30.5 dBm of output power at 1 dB gain compression while requiring 400mA from a +12V supply. Gain flatness is excellent at ±0.5 dB from DC to 6 GHz making the HMC637A ideal for EW, ECM, Radar and test equipment applications.

The HMC637A amplifier I/Os are internally matched to 50 Ohms facilitating integration into Mutli-ChipModules (MCMs). All data is taken with the chip connected via two 0.025mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).

Applications

Telecom Infrastructure
Microwave Radio & VSAT
Military & Space
Test Instrumentation
Fiber Optics

Features and Benefits

P1dB Output Power: +30.5 dBm

Gain: 14 dB

Output IP3: +41 dBm

Bias Supplies: +12V, +6V, -1V

50 Ohm Matched Input/Output

Die Size: 2.98 x 2.48 x 0.1 mm

Amplifiers

Wideband Distributed Amplifiers

Data Sheets

Document	note
HMC637A: Bare Die Data Sheet	PDF 678.88 K

Application Notes

Document	note
AN-1363: Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers (Rev. 0)	PDF 804.11 K
MMIC Amplifier Biasing Procedure Application Note	PDF 435.1 K
Broadband Biasing of Amplifiers General Application Note	PDF 433.77 K
Thermal Management for Surface Mount Components General Application Note	PDF 189.99 K