HMC637ALP5 GaAs pHEMT MMIC 1W Power Amplifier, DC - 6 GHz

The HMC637ALP5E is a GaAs MMIC pHEMT Distributed Power Amplifier which operates between DC and 6 GHz. The amplifier provides 13 dB of gain, +44 dBm output IP3 and +29 dBm of output power at 1 dB gain compression while requiring 400 mA from a +12V supply. Gain flatness is excellent at ±0.75 dB from DC - 6 GHz making the HMC637ALP5E ideal for EW, ECM, Radar and test equipment applications. The HMC637ALP5E amplifier I/Os are internally matched to 50 Ohms and the 5x5 mm QFN package is compatible with high volume SMT assembly equipment.

Applications

Telecom Infrastructure
Microwave Radio & VSAT
Military & Space
Test Instrumentation
Fiber Optics

Features and Benefits

P1dB Output Power: +29 dBm

Gain: 13 dB

Output IP3: +44 dBm

50 Ohm Matched Input/Output

32 Lead 5x5mm SMT Package

Amplifiers

Wideband Distributed Amplifiers

S-Parameters

HMC637ALP5 S-Parameter .ZIP

Data Sheets

Document	note
HMC637ALP5E: GaAs pHEMT MMIC 1 Watt Power Amplifier, DC-6 GHz Data Sheet	PDF 665.6 K

Application Notes

Document	note
AN-1363: Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers (Rev. 0)	PDF 804.11 K
MMIC Amplifier Biasing Procedure Application Note	PDF 435.1 K
Broadband Biasing of Amplifiers General Application Note	PDF 433.77 K
Thermal Management for Surface Mount Components General Application Note	PDF 189.99 K

Order Information

Part Number	Package	Packing Qty	Temp Range	Price 100-499	Price 1000+	RoHS
HMC637ALP5E Production	32 ld QFN (5x5mm w/3.651mm ep)	OTH 50	-55 to 85C	98.52	79.8	Y
HMC637ALP5ETR Production	32 ld QFN (5x5mm w/3.651mm ep)	REEL 500	-55 to 85C	98.52	79.8	Y