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The HMC659LC5 is a GaAs MMIC PHEMT Distributed Power Amplifier which is housed in a leadless 5x5 mm RoHS compliant ceramic SMT package operating between DC and 15 GHz. The amplifier provides 19 dB of gain, +35 dBm output IP3 and +27.5 dBm of output power at 1 dB gain compression, while requiring 300mA from a +8V supply.
Gain flatness is excellent at ±0.7 dB from DC - 15 GHz making the HMC659LC5 ideal for EW, ECM, Radar and test equipment applications. The HMC659LC5 amplifier I/Os are internally matched to 50 ohms with no external components. The HMC659LC5 is compatible with high volume surface mount manufacturing techniques.
Features and BenefitsSMT Package: 25mm² | RF & MicrowaveS-Parameters |
| Document | note |
| HMC659LC5 Data Sheet | PDF 650.66 K |
| Part Number | Package | Packing Qty | Temp Range | Price 100-499 | Price 1000+ | RoHS |
|---|---|---|---|---|---|---|
| HMC659LC5 Production | LCC:CER LEADLESS CHIP CARR | OTH 50 | -55 to 85C | 259.15 | 209.91 | Y |
| HMC659LC5TR Production | LCC:CER LEADLESS CHIP CARR | REEL 100 | -55 to 85C | 259.15 | 209.91 | Y |
| HMC659LC5TR-R5 Production | LCC:CER LEADLESS CHIP CARR | REEL 500 | -55 to 85C | 259.15 | 209.91 | Y |
| Part Number | Description | Price | RoHS |
|---|---|---|---|
| 117494-HMC659LC5 | Evaluation Board - HMC659LC5 Evaluation PCB | 721.6 | Y |
