HMC7149-DIE 10 Watt GaN MMIC Power Amplifier, 6 - 18 GHz

The HMC7149 is an 10W Gallium Nitride (GaN) MMIC Power Amplifier which operates between 6 and 18 GHz. The amplifier typically provides 20 dB of small signal gain, +40 dBm of saturated output power, and +39.5 dBm output IP3 at +28 dBm output power per tone. The HMC7149 draws 680 mA current from a +28V DC supply. The RF I/Os are matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All electrical performance data was acquired with the die eutectically attached to 1.02 mm (40 mil) thick CuMo carrier with multiple 1.0 mil diameter ball bonds connecting the die to 50 Ohm transmission lines on alumina.

Applications

Test Instrumentation
General Communications
Radar

Features and Benefits

High Psat: +40 dBm

Power Gain at Psat: +10 dB

High Output IP3: +39.5 dBm

Small Signal Gain: 20 dB

Supply Voltage: +28V @ 0.680 A

50 Ohm Matched Input/Output

Die Size: 3.4 x 4.5 x 0.1 mm2

Amplifiers

RF Amplifiers

S-Parameters

HMC7149 S-Parameters .ZIP

Data Sheets

Document	note
HMC7149: 10 WATT GaN MMIC Power Amplifier, 6 to 18 GHz Data Sheet	PDF 2.43 M

Application Notes

Document	note
AN-1363: Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers (Rev. 0)	PDF 804.11 K
MMIC Amplifier Biasing Procedure Application Note	PDF 435.1 K
Broadband Biasing of Amplifiers General Application Note	PDF 433.77 K
Thermal Management for Surface Mount Components General Application Note	PDF 189.99 K