HMC7229LS6 GaAs, pHEMT, MMIC, 1 W, Power Amplifier with Power Detector, 37 GHz to 40 GHz
The HMC7229LS6 is a four stage, gallium arsenide (GaAs),
pseudomorphic high electron mobility transfer (pHEMT),
monolithic microwave integrated circuit (MMIC), 1 W power
amplifier, with an integrated temperature compensated on-chip
power detector that operates between 37 GHz to 40 GHz. The
HMC7229LS6 provides 24 dB of gain and 32 dBm of saturated
output power at 18% PAE at 39 GHz from a 6 V supply. With an
excellent IP3 of 40 dBm, the HMC7229LS6 is ideal for linear
applications such as high capacity, point to point or multipoint
radios or VSAT/SATCOM applications demanding 32 dBm of
efficient saturated output power. The radio frequency (RF)
input/outputs are internally matched and dc blocked for ease of
integration into higher level assemblies. The HMC7229LS6 is
housed in a ceramic, 6 mm × 6 mm, high frequency, air cavity
package that exhibits low thermal resistance and is compatible
with surface-mount manufacturing techniques.
Applications
Features and Benefits32 dBm typical saturated output power (PSAT) at 18% power added efficiency (PAE) at 39 GHzP1dB compression output power: 31.5 dBm typicalHigh output third-order intercept (IP3): 40 dBm typicalHigh gain: 24 dB typical50 Ω matched input/outputCeramic, 6 mm × 6 mm, high frequency, air cavity package | S-Parameters |
Data Sheets
Application Notes
Order Information
| Part Number | Package | Packing Qty | Temp Range | Price 100-499 | Price 1000+ | RoHS |
|---|
| HMC7229LS6 Production | CER LDLESS CHIP W/HEATSINK | OTH 50 | -40 to 85C | 48.75 | 39.11 | Y |
| HMC7229LS6TR Production | CER LDLESS CHIP W/HEATSINK | REEL 100 | -40 to 85C | 48.75 | 39.11 | Y |
Evaluation Boards
| Part Number | Description | Price | RoHS |
|---|
| EVAL01-HMC7229LS6 | Evaluation Board – HMC7229LS6 Evaluation Board | 656 | Y |
Reference Materials
