HMC797 / HMC797LP5E 1-Watt Power Amplifier Chip or SMT, DC to 22 GHz

The HMC797 devices are GaAs, monolithic microwave integrated circuit (MMIC), and PHEMT distributed power amplifiers which operate between dc and 22 GHz. These amplifiers provide up to 13.5 dB or 14.5 dB of gain, +39 dBm or +40 dBm of output IP3, and +28 dBm of output power at 1 dB gain compression, while requiring 400 mA from a +10 V supply. These versatile power amplifiers exhibit a positive gain slope from dc to 22 GHz, making them ideal for EW, ECM, radar, and test equipment applications. The inputs/outputs of these devices are internally matched to 50 Ω, facilitating integration into multichip modules (MCMs). All chip data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal 0.31 mm (12 mils) length. The power amplifier SMT is packaged in a leadless, QFN, 5 × 5 mm, surface-mount package and requires no external matching components.

Applications

Test instrumentation
Microwave radio and VSAT
Military and space
Telecom infrastructure
Fiber optics

Features and Benefits

High P1dB output power: +28 dBm

High PSAT output power: +29.5 dBm, +31 dBm

High gain: 13.5 dB, 14.5 dB

High output IP3: +39 dBm, +40 dBm

Supply voltage: +10 V at 400 mA

50 Ω matched input/output

Die size: 2.89 × 1.55 × 0.1 mm

32-lead, 5 × 5 mm, surface-mount technology (SMT) package

Amplifiers

RF Amplifiers

Aerospace and Defense

Solutions

S-Parameters

HMC797LP5E S-Parameters .ZIP
HMC797 Die S-Parameters .ZIP

Data Sheets

Document	note
HMC797LP5E Data Sheet	PDF 909.91 K
HMC797 Die Data Sheet	PDF 841.17 K

Order Information

Part Number	Package	Packing Qty	Temp Range	Price 100-499	Price 1000+	RoHS
HMC797 Last Time Buy	CHIPS OR DIE	OTH 10	-55 to 85C	197.08	159.63	Y
HMC797-SX Last Time Buy	CHIPS OR DIE	OTH 2	-55 to 85C	0	0	Y
HMC797LP5E Last Time Buy	32 ld QFN (5x5mm w/3.651mm ep)	OTH 50	-55 to 85C	149.03	122.81	Y
HMC797LP5ETR Last Time Buy	32 ld QFN (5x5mm w/3.651mm ep)	REEL 500	-55 to 85C	149.03	122.81	Y