HMC8120 71 GHz to 76 GHz, E-Band Variable Gain Amplifier
The HMC8120 is an integrated E-band, gallium arsenide (GaAs), pseudomorphic (pHEMT), monolithic microwave integrated circuit (MMIC) variable gain amplifier and/or driver amplifier that operates from 71 GHz to 76 GHz. The HMC8120 provides up to 22 dB of gain, 21 dBm of output P1dB, 30 dBm of OIP3, and 22 dBm of PSAT while requiring only 250 mA from a 4 V power supply. Two gain control voltages (VCTL1 and VCTL2) are provided to allow up to 15 dB of variable gain control. The HMC8120 exhibits excellent linearity and is optimized for E-band communications and high capacity wireless backhaul radio systems. All data is taken with the chip in a 50 Ω test fixture connected via a 3 mil wide × 0.05 mil thick × 7 mil long ribbon on each port.
Applications
- E-band communication systems
- High capacity wireless backhaul radio systems
- Test and measurement
Features and BenefitsGain: 22 dB typicalWide gain control range: 15 dB typicalOutput third-order intercept (OIP3): 30 dBm typicalOutput power for 1 dB compression (P1dB): 21 dBm typicalSaturated output power (PSAT): 22 dBm typicalDC supply: 4 V at 250 mANo external matching requiredDie size: 3.599 mm × 1.369 mm × 0.05 mm | |
Data Sheets
Application Notes
Order Information
| Part Number | Package | Packing Qty | Temp Range | Price 100-499 | Price 1000+ | RoHS |
|---|
| HMC8120 Production | CHIPS OR DIE | OTH 25 | -55 to 85C | 55.21 | 45.47 | Y |
| HMC8120-SX Production | CHIPS OR DIE | OTH 2 | -55 to 85C | 0 | 0 | Y |
