HMC8400-DIE 2 GHz to 30 GHz, GaAs pHEMT MMIC Low Noise Amplifier
The HMC8400 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC). The HMC8400 is a wideband low noise amplifier that operates between 2 GHz and 30 GHz. The amplifier provides 13.5 dB of gain, a 2 dB noise figure, 26.5 dBm output IP3, and 14.5 dBm of output power at 1 dB gain compres-sion, requiring 67 mA from a 5 V supply. The HMC8400 is self biased with only a single positive supply needed to achieve a drain current IDD of 67 mA. The HMC8400 also has a gain control option, VGG2. The HMC8400 amplifier input/outputs are internally matched to 50 Ω and dc blocked, facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).
Applications
Features and BenefitsOutput power for 1 dB compression (P1dB): 14.5 dBm typicalSaturated output power (PSAT): 17 dBm typicalGain: 13.5 dB typicalNoise figure: 2 dBOutput third-order intercept (IP3): 26.5 dBm typicalSupply voltage: 5 V at 67 mA50 Ω matched input/outputDie size: 2.7 mm × 1.35 mm × 0.1 mm | |
Data Sheets
Order Information
Part Number | Package | Packing Qty | Temp Range | Price 100-499 | Price 1000+ | RoHS |
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HMC8400 Production | CHIPS OR DIE | OTH 25 | -55 to 85C | 102.61 | 96 | Y |
HMC8400-SX Production | CHIPS OR DIE | REEL 2 | -55 to 85C | 0 | 0 | Y |