HMC930-DIE 0.25 Watt Power Amplifier Chip, DC - 40 GHz

The HMC930 is a GaAs MMIC pHEMT Distributed Power Amplifier which operates between DC and 40 GHz. The amplifier provides 13 dB of gain, 33.5 dBm output IP3 and +22 dBm of output power at 1 dB gain compression while requiring 175 mA from a +10 V supply. The HMC930 exhibits a slightly positive gain slope from 8 to 32 GHz, making it ideal for EW, ECM, Radar and test equipment applications. The HMC930 amplifier I/Os are internally matched to 50 Ohms facilitating integration into Mutli-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).

Applications

Features and Benefits
  • High P1dB Output Power: 22 dBm
  • High Psat Output Power: 24 dBm
  • High Gain: 13 dB
  • High Output IP3: +33.5 dBm
  • Supply Voltage: +10 V @ 175 mA
  • 50 Ohm matched Input/Output
  • Die Size: 2.82 x 1.50 x 0.1 mm
  • Amplifiers
    S-Parameters
    Data Sheets
    Documentnote
    HMC930 Data SheetPDF 884.68 K
    Application Notes
    Documentnote
    AN-1363: Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers (Rev. 0)PDF 804.11 K
    Order Information
    Part NumberPackagePacking QtyTemp RangePrice 100-499Price 1000+RoHS
    HMC930 Last Time BuyCHIPS OR DIEOTH 10-55 to 85C00Y
    HMC930 Data Sheet hmc930-die
    HMC930 S-Parameter hmc930-die
    AN-1363: 利用有源偏置控制器满足外部偏置射频/微波放大器的偏置要求 (Rev. 0) hmc8120
    AN-1363: Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers (Rev. 0) hmc8120