HMC930-DIE 0.25 Watt Power Amplifier Chip, DC - 40 GHz
The HMC930 is a GaAs MMIC pHEMT Distributed Power Amplifier which operates between DC and 40 GHz. The amplifier provides 13 dB of gain, 33.5 dBm output IP3 and +22 dBm of output power at 1 dB gain compression while requiring 175 mA from a +10 V supply. The HMC930 exhibits a slightly positive gain slope from 8 to 32 GHz, making it ideal for EW, ECM, Radar and test equipment applications. The HMC930 amplifier I/Os are internally matched to 50 Ohms facilitating integration into Mutli-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).
Applications
Features and BenefitsHigh P1dB Output Power:
22 dBmHigh Psat Output Power:
24 dBmHigh Gain: 13 dBHigh Output IP3: +33.5 dBmSupply Voltage: +10 V @ 175 mA50 Ohm matched Input/OutputDie Size: 2.82 x 1.50 x 0.1 mm | S-Parameters |
Data Sheets
Application Notes
Order Information
Part Number | Package | Packing Qty | Temp Range | Price 100-499 | Price 1000+ | RoHS |
---|
HMC930 Last Time Buy | CHIPS OR DIE | OTH 10 | -55 to 85C | 0 | 0 | Y |