Features- High linearity and P1dB
- Unconditionally Stable across load condition
- Built in adjustable temperature compensated internal bias circuitry
- GaAs E-pHEMT Technology[1]
- Standard QFN 3X3 package
- 5V supply
- Excellent uniformity in product specifications
- Tape-and-Reel packaging option available
- MSL-1 and Lead-free
- Point MTTF > 300 years at 120°C channel temperature
Applications- Class A driver amplifier for GSM/CDMA Base Stations.
- General purpose gain block.
Related Product | | Specification | Value |
|---|
| Lifecycle | Active | | RoHS6 Compliant | Y | | Distrib. Inventory | Yes | | Samples Available | Yes | | Max Qty of Samples | 5 | | Frequency (GHz) | 0.4-1 | | Bias Condition (V@mA) | 5V@202.8mA | | NF (dB) | 2.0 | | Gain (dB) | 17 | | P1dB (dBm) | 27.7 | | OIP3 (dBm) | 44.1 | | Package | QFN 3x3 |
|
