FET

Part NumberProduct NameFrequency (GHz)Bias Condition (V@mA)NF (dB)Gain (dB)P1dB (dBm)OIP3 (dBm)PackageLifecycleRoHS6 fully compliant
VMMK-12250.5 到 26 GHz 低噪声 E-pHEMT(晶片级封装)0.5-262V@20mA1.011823SMT 1.05x0.55ActiveY
VMMK-12180.5 到 18 GHz 低噪声 E-pHEMT(晶片级封装)103/200.7111222GaAsCap 0402, 1.0x0.5x0.25ActiveY
ATF-58143SC-70 下单电压 E-pHEMT 低噪声 30.5 dBm OIP30.45-63V@30mA0.516.51930.5SOT-343ActiveY
ATF-551M4MiniPak 下单电压 E-pHEMT 低电流噪声 24 dBm OIP30.45-62.7V@10mA0.517.514.624.1SMT 1.4x1.2ActiveY
ATF-55143SC-70 下单电压 E-pHEMT 低电流低噪声 24.2 dBm OIP30.45-62.7V@10mA0.617.724.2SOT-343ActiveY
ATF-541M4MiniPak 下单电压 E-pHEMT 低噪声 36 dBm OIP30.45-103V@60mA0.517.521.435.8SMT 1.4x1.2ActiveY
ATF-54143SC-70 下单电压 E-pHEMT 低噪声 36 dBm OIP30.45-63V@60mA0.516.620.436.2SOT-343ActiveY
ATF-531P8单电压 E-pHEMT 低噪声 38 dBm OIP3 采用 LPCC 封装0.05-64V@135mA0.62024.538SMT 2x2ActiveY
ATF-53189SOT-89 封装下单电压 E-pHEMT 低噪声 40dBm OIP30.05-64V@135mA0.8515.52340SOT-89ActiveY
ATF-521P8单电压 E-pHEMT 低噪声 42 dBm OIP3 采用 LPCC 封装0.05-64.5V@200mA1.51726.542SMT 2x2ActiveY
ATF-52189SOT-89 封装下单电压 E-pHEMT 低噪声 42 dBm OIP30.05-64.5V@200mA1.5162742SOT-89ActiveY
ATF-511P8LPCC 下单电压 E-pHEMT 低噪声 41.7 dBm OIP30.05-64.5V@200mA1.414.83041.7SMT 2x2ActiveY
ATF-501P8单电压 E-pHEMLPCC 下单电压 E-pHEMT 低噪声 45.5 dBm OIP30.4-3.94.5V@280mA1.0152945.5SMT 2x2ActiveY
ATF-50189SOT-89 封装下单电压 E-pHEMT 低噪声 45 dBm OIP30.4-3.94.5V@280mA1.115.52945SOT-89ActiveY
ATF-38143SC-70 (SOT-343) 低噪声 22 dBm OIP30.45-102V@10mA0.4161222SOT-343ActiveY
ATF-36163SC-70 (SOT-363) 低噪声高频率 pHEMT 5dBm P1dB1.5-182.0V@15mA1.0105SOT-363ActiveY
ATF-35143表面贴装塑料封装下的低噪声假象 HEMT0.45-102.0V@15mA0.4181121SOT-343ActiveY
ATF-34143SC-70 (SOT-343) 低噪声 31.5 dBm OIP30.45-104.0V@60mA0.517.52031.5SOT-343ActiveY
ATF-331M4MiniPak 下 pHEMT 低噪声 31 dBm OIP30.45-104.0V@60mA0.6151931SMT 1.4x1.2ActiveY
ATF-33143SC-70 (SOT-343) 低噪声 31.5 dBm OIP30.45-104.0V@80mA0.5152233.5SOT-343ActiveY