DMP1011UCB9:P Channel 8V to 29V

Part NumberData SheetSPICE ModelQualified to AECQ10xPPAP CapablePolarityESD Diodes (Y/N)VDS (V)VGS (±V)IDS @TA = +25°C (A)PD @TA = +25°C (W)RDS(ON)Max @ VGS(10V) (mΩ)RDS(ON)Max @ VGS(4.5V) (mΩ)RDS(ON)Max @ VGS(2.5V) (mΩ)RDS(ON)Max @ VGS(1.8V) (mΩ)VGS(th) Min.(V)VGS (th) Max (V)CISS Typ (pF)CISS Condition [@VDS] (V)QG Typ@ VGS = 10V(nC)QG Typ @ VGS = 4.5V(nC)
DMP1011UCB9DMP1011UCB9.pdfDMP1011UCB9Yes-PYes86101.571014-1.181748.1
Description

This 3rd generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer. It uses Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(on) per footprint area.

Application
  • DC-DC Converters
  • Battery Management
  • Load Switch
Features
  • LD-MOS Technology with the Lowest Figure of Merit: RDS(on) = 8.2mΩ to Minimize On-State Losses Qg = 8.1nC for Ultra-Fast Switching
  • Vgs(th) = -0.8V typ. for a Low Turn-On Potential
  • CSP with Footprint 1.5mm × 1.5mm
  • Height = 0.60mm for Low Profile
  • ESD = 6kV HBM Protection of Gate
Ordering Information
  • DMP1011UCB9-7
U-WLB1515-9
DMP1011UCB9.pdf DMP1011UCB9
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