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Fairchild Semiconductor
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Bipolar Transistors
> 2N6520
2N6520: PNP Epitaxial Silicon Transistor
2N6520 Datasheet
Features
Collector-Emitter Voltage V
CEO
= -350V
Collector Dissipation: P
C
(max)=625mW
Complement to 2N6517
Ordering Code
Product
Product & Eco Status
Unit Price/1K Order
Packing Method Convention
Package Marking Convention*
2N6520BU
Obsolete as of 23-Sep-2010 ROHS Compliant as of 27-Feb-2006 Replacement Part: None China RoHS
N/A
TO-92 3L - 5.59 x 5.49 x 21.77mm, BULK
TO-92 3L Drawing
Last Update: Oct 2015
Line 1
2N
2N6520TA
Full Production ROHS Compliant as of 27-Feb-2006 China RoHS
$0.0318
TO-92 3L - 4.19 x 5.2 x 21.77mm, AMMO
TO-92 3L Drawing
Last Update: Oct 2015
TO92-3L, PACKING DRAWING
Last Update: May 2014
Line 1
2N
Line 2
6520
Line 3
-
&3
(3-Digit Date Code)
Application Notes
AN-1025
Maximum Power Enhancement Techniques for SuperSOT™-3 Power MOSFETs
Last Update : 15-Jun-2015
2N6520.pdf
TO-92 3L Drawing
Last Update: Oct 2015
TO-92 3L Drawing
Last Update: Oct 2015
TO92-3L, PACKING DRAWING
Last Update: May 2014
Maximum Power Enhancement Techniques for SuperSOT™-3 Power MOSFETs
Last Update : 15-Jun-2015
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