2N7002L: N-Channel Enhancement Mode Field Effect Transistor

This N-channel enhancement mode field effect transistor is produced using high cell density, trench MOSFET technology. This product minimizes on-state resistance while providing rugged, reliable and fast switching performance. This product is particularly suited for low-voltage, low-current applications such as small servo motor control, power MOSFET gate drivers, logic level translator, high speed line drivers, power management/power supply, and switching applications.

Features

• High Density Cell Design for Low R_DS(ON)
• Voltage Controlled Small Signal Switch
• Rugged and Reliable
• High Saturation Current Capability
• Very Low Capacitance
• Fast Switching Speed

Application Notes