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Home > Fairchild Semiconductor > FET > BS170

BS170: N-Channel Enhancement Mode Field Effect Transistor

This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 500 mA DC. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

BS170 Datasheet
Features
  • High density cell design for low RDS(ON).
  • Voltage controlled small signal switch.
  • Rugged and reliable.
  • High saturation current capability.
Ordering Code
ProductProduct & Eco StatusUnit Price/1K OrderPacking Method ConventionPackage Marking Convention*
BS170Full Production ROHS Compliant as of 27-Feb-2006  China RoHS$0.038TO-92 3L  -  4.19 x 5.2 x 20.95mm,  BULK
  • TO-92 3L  Drawing Last Update: Mar 2015
  • TO92-3L, PACKING DRAWING Last Update: May 2014
Line 1$Y (Fairchild logo)
&Z (Plant Code)
&3 (3-Digit Date Code)

Line 2BS170

BS170_D27ZFull Production ROHS Compliant as of 27-Feb-2006  China RoHS$0.038TO-92 3L  -  4.19 x 5.2 x 21.77mm,  TAPE REEL
  • TO-92 3L  Drawing Last Update: Oct 2015
  • TO92-3L, PACKING DRAWING Last Update: May 2014
Line 1$Y (Fairchild logo)
&Z (Plant Code)
&3 (3-Digit Date Code)

Line 2BS170

BS170_D26ZFull Production ROHS Compliant as of 27-Feb-2006  China RoHS$0.038TO-92 3L  -  4.19 x 5.2 x 21.77mm,  TAPE REEL
  • TO-92 3L  Drawing Last Update: Oct 2015
  • TO92-3L, PACKING DRAWING Last Update: May 2014
Line 1$Y (Fairchild logo)
&Z (Plant Code)
&3 (3-Digit Date Code)

Line 2BS170

BS170_D75ZFull Production ROHS Compliant as of 27-Feb-2006  China RoHS$0.038TO-92 3L  -  4.19 x 5.2 x 21.77mm,  AMMO
  • TO-92 3L  Drawing Last Update: Oct 2015
  • TO92-3L, PACKING DRAWING Last Update: May 2014
Line 1$Y (Fairchild logo)
&Z (Plant Code)
&3 (3-Digit Date Code)

Line 2BS170

BS170_D74ZFull Production ROHS Compliant as of 27-Feb-2006  China RoHS$0.038TO-92 3L  -  4.19 x 5.2 x 21.77mm,  AMMO
  • TO-92 3L  Drawing Last Update: Oct 2015
  • TO92-3L, PACKING DRAWING Last Update: May 2014
Line 1$Y (Fairchild logo)
&Z (Plant Code)
&3 (3-Digit Date Code)

Line 2BS170

Application Notes
  • AN-4163 Shielded Gate PowerTrench® MOSFET Datasheet Explanation Last Update : 23-Oct-2014
  • AN-9034 Power MOSFET Avalanche Guideline Last Update : 05-Mar-2011
  • AN-7510 A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options Last Update : 05-Mar-2011
  • AN-9010 MOSFET Basics Last Update : 09-Sep-2013
  • AN-9065 FRFET® in Synchronous Rectification Last Update : 28-Jun-2014
  • AN-7515 A Combined Single-Pulse and Repetitive UIS Rating System Last Update : 03-Mar-2011
  • AN-7533 A Revised MOSFET Model With Dynamic Temperature Compensation Last Update : 05-Mar-2011
  • AN-558 Introduction to Power MOSFETs and their Applications Last Update : 29-Mar-2016
  • AN-9005 Driving and Layout Design for Fast Switching Super-Junction MOSFETs Last Update : 26-Nov-2014
  • BS170.pdf
    Power MOSFET Avalanche Guideline Last Update : 05-Mar-2011
    MOSFET Basics Last Update : 09-Sep-2013
    A Combined Single-Pulse and Repetitive UIS Rating System Last Update : 03-Mar-2011
    FRFET® in Synchronous Rectification Last Update : 28-Jun-2014
    Driving and Layout Design for Fast Switching Super-Junction MOSFETs Last Update : 26-Nov-2014
    TO-92 3L  Drawing Last Update: Mar 2015
    TO92-3L, PACKING DRAWING Last Update: May 2014
    TO-92 3L  Drawing Last Update: Oct 2015
    TO92-3L, PACKING DRAWING Last Update: May 2014
    Shielded Gate PowerTrench® MOSFET Datasheet Explanation Last Update : 23-Oct-2014
    A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options Last Update : 05-Mar-2011
    A Revised MOSFET Model With Dynamic Temperature Compensation Last Update : 05-Mar-2011
    Introduction to Power MOSFETs and their Applications Last Update : 29-Mar-2016
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