BSS123: N-Channel Logic Level Enhancement Mode Field Effect Transistor
This N-Channel enhancement mode field effect transistors is produced using Fairchild’s proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance.The BSS123 is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features
- 0.17 A, 100 V, RDS(ON) = 6 Ω @ VGS = 10 V
- 0.17 A, 100 V, RDS(ON) = 10 Ω @ VGS = 4.5 V
- High Density Cell Design for Extremely Low RDS(ON)
- Rugged and Reliable
- Compact Industry Standard SOT-23 Surface Mount Package
Ordering Code| Product | Product & Eco Status | Unit Price/1K Order | Packing Method Convention | Package Marking Convention* |
|---|
| BSS123 | Full Production
Green as of Jan 2013
China RoHS | $0.0192 | SOT-23 3L
-
1.2 x 2.92 x 1.3mm,
TAPE REEL | Line 1&Y (Binary Calendar Year Coding)
Line 2SA&E (Space)
&G (Weekly Date Code)
|
Application Notes
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