BSS123W: N-Channel Logic Level Enhancement Mode Field Effect Transistor
This N-channel enhancement mode field effect transistor is produced using high cell density, trench MOSFET technology. This product minimizes on-state resistance while providing rugged, reliable and fast switching performance. This product is particularly suited for low-voltage, low-current applications such as small servo motor control, power MOSFET gate drivers, logic level transistor, high speed line drivers, power management/power supply and switching applications.
Features
- 0.17 A, 100 V, RDS(ON) = 6 Ω at VGS = 10 V
- 0.17 A, 100 V, RDS(ON) = 10 Ω at VGS = 4.5 V
- High Density Cell Design for Low RDS(ON)
- Rugged and Reliable
- Ultra Small Surface Mount Package
- Very Low Capacitance
- Fast Switching Speed
- Lead Free / RoHS Compliant
Ordering Code| Product | Product & Eco Status | Unit Price/1K Order | Packing Method Convention | Package Marking Convention* |
|---|
| BSS123W | Full Production
Green as of Dec 2015
China RoHS | $0.0528 | SC70 3L
-
1.1 x 2.2 x 2.4mm,
TAPE REEL | Line 1&E (Space)
&Y (Binary Calendar Year Coding)
Line 2&Z (Plant Code)
SA&D
|
Application Notes
AN-4163 Shielded Gate PowerTrench® MOSFET Datasheet Explanation Last Update : 23-Oct-2014AN-9034 Power MOSFET Avalanche Guideline Last Update : 05-Mar-2011AN-7510 A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options Last Update : 05-Mar-2011AN-9010 MOSFET Basics Last Update : 09-Sep-2013AN-9065 FRFET® in Synchronous Rectification Last Update : 28-Jun-2014AN-7515 A Combined Single-Pulse and Repetitive UIS Rating System Last Update : 03-Mar-2011AN-7533 A Revised MOSFET Model With Dynamic Temperature Compensation Last Update : 05-Mar-2011AN-558 Introduction to Power MOSFETs and their Applications Last Update : 29-Mar-2016AN-9005 Driving and Layout Design for Fast Switching Super-Junction MOSFETs Last Update : 26-Nov-2014