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Home > Fairchild Semiconductor > FET > FCB20N60F

FCB20N60F: N-Channel SuperFET® FRFET® MOSFET 600V, 20A, 190mΩ

SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.

FCB20N60F Datasheet
Features
  • 650V @TJ = 150°C
  • Typ. RDS(on) = 150mΩ
  • Ultra low gate charge ( Typ. Qg = 75nC )
  • Low effective output capacitance ( Typ. Coss.eff = 165pF )
  • 100% avalanche tested
  • RoHS compliant
Ordering Code
ProductProduct & Eco StatusUnit Price/1K OrderPacking Method ConventionPackage Marking Convention*
FCB20N60FTMFull Production ROHS Compliant as of 27-Feb-2006  China RoHS$3.96TO-263 2L (D2PAK)  -  4.445 x 10.16 x 15.24mm,  TAPE REEL
  • TO-263 2L (D2PAK)  Drawing Last Update: May 2016
  • TO263-2L, SURFACE MOUNT, VARIATION AB,PACKING DRAWING Last Update: Oct 2016
  • TO263-2L, PACKING DRAWING Last Update: May 2013
  • TO263_TUBE PACKING DRAWING Last Update: Jun 2013
Line 1$Y (Fairchild logo)
&Z (Plant Code)
&3 (3-Digit Date Code)
&K

Line 2FCB

Line 320N60F

Application Notes
  • AN-4163 Shielded Gate PowerTrench® MOSFET Datasheet Explanation Last Update : 23-Oct-2014
  • AN-9034 Power MOSFET Avalanche Guideline Last Update : 05-Mar-2011
  • AN-7510 A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options Last Update : 05-Mar-2011
  • AN-9010 MOSFET Basics Last Update : 09-Sep-2013
  • AN-9065 FRFET® in Synchronous Rectification Last Update : 28-Jun-2014
  • AN-7515 A Combined Single-Pulse and Repetitive UIS Rating System Last Update : 03-Mar-2011
  • AN-7533 A Revised MOSFET Model With Dynamic Temperature Compensation Last Update : 05-Mar-2011
  • AN-558 Introduction to Power MOSFETs and their Applications Last Update : 29-Mar-2016
  • AN-9005 Driving and Layout Design for Fast Switching Super-Junction MOSFETs Last Update : 26-Nov-2014
  • AN-9067 Analysis of MOSFET Failure Modes in LLC Resonant Converter Last Update : 28-Jun-2014
  • FCB20N60F.pdf
    MOSFET Basics Last Update : 09-Sep-2013
    A Combined Single-Pulse and Repetitive UIS Rating System Last Update : 03-Mar-2011
    FRFET® in Synchronous Rectification Last Update : 28-Jun-2014
    Driving and Layout Design for Fast Switching Super-Junction MOSFETs Last Update : 26-Nov-2014
    Power MOSFET Avalanche Guideline Last Update : 05-Mar-2011
    Analysis of MOSFET Failure Modes in LLC Resonant Converter Last Update : 28-Jun-2014
    TO-263 2L (D2PAK)  Drawing Last Update: May 2016
    TO263-2L, SURFACE MOUNT, VARIATION AB,PACKING DRAWING Last Update: Oct 2016
    TO263-2L, PACKING DRAWING Last Update: May 2013
    TO263_TUBE PACKING DRAWING Last Update: Jun 2013
    A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options Last Update : 05-Mar-2011
    A Revised MOSFET Model With Dynamic Temperature Compensation Last Update : 05-Mar-2011
    Shielded Gate PowerTrench® MOSFET Datasheet Explanation Last Update : 23-Oct-2014
    Introduction to Power MOSFETs and their Applications Last Update : 29-Mar-2016
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