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Home > Fairchild Semiconductor > FET > FCP190N60E

FCP190N60E: N-Channel SuperFET® II Easy-Drive MOSFET 600V, 20.6A, 190mΩ

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

FCP190N60E Datasheet
Features
  • 650V @TJ = 150°C
  • Max. RDS(on) = 190mΩ
  • Ultra low gate charge ( Typ. Qg = 63nC )
  • Low effective output capacitance ( Typ. Coss.eff = 178pF )
  • 100% avalanche tested
Ordering Code
ProductProduct & Eco StatusUnit Price/1K OrderPacking Method ConventionPackage Marking Convention*
FCP190N60EFull Production Green as of Jul 2015  China RoHS$2.592TO-220 3L  -  4.83 x 10.16 x 8.89mm,  RAIL
  • TO-220 3L  Drawing Last Update: Nov 2015
  • TO220-3L, JEDEC VARIATION, PACKING DRAWING Last Update: Oct 2013
  • TO Tube Packing Drawing Last Update: Sep 2015
  • TO Vacuum Packing Drawing Last Update: Sep 2015
Line 1$Y (Fairchild logo)
&Z (Plant Code)
&3 (3-Digit Date Code)
&K

Line 2FCP

Line 3190N60E

Application Notes
  • AN-4163 Shielded Gate PowerTrench® MOSFET Datasheet Explanation Last Update : 23-Oct-2014
  • AN-9034 Power MOSFET Avalanche Guideline Last Update : 05-Mar-2011
  • AN-7510 A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options Last Update : 05-Mar-2011
  • AN-9010 MOSFET Basics Last Update : 09-Sep-2013
  • AN-9065 FRFET® in Synchronous Rectification Last Update : 28-Jun-2014
  • AN-7515 A Combined Single-Pulse and Repetitive UIS Rating System Last Update : 03-Mar-2011
  • AN-7533 A Revised MOSFET Model With Dynamic Temperature Compensation Last Update : 05-Mar-2011
  • AN-558 Introduction to Power MOSFETs and their Applications Last Update : 29-Mar-2016
  • AN-9005 Driving and Layout Design for Fast Switching Super-Junction MOSFETs Last Update : 26-Nov-2014
  • AN-5232 New Generation Super-Junction MOSFETs, SuperFET® II and SuperFET® II Easy Drive MOSFETs for High Efficiency and Lower Switching Noise Last Update : 28-Jun-2014
  • FCP190N60E.pdf
    MOSFET Basics Last Update : 09-Sep-2013
    A Combined Single-Pulse and Repetitive UIS Rating System Last Update : 03-Mar-2011
    FRFET® in Synchronous Rectification Last Update : 28-Jun-2014
    Driving and Layout Design for Fast Switching Super-Junction MOSFETs Last Update : 26-Nov-2014
    Power MOSFET Avalanche Guideline Last Update : 05-Mar-2011
    New Generation Super-Junction MOSFETs, SuperFET® II and SuperFET® II Easy Drive MOSFETs for High Efficiency and Lower Switching Noise Last Update : 28-Jun-2014
    TO-220 3L  Drawing Last Update: Nov 2015
    TO220-3L, JEDEC VARIATION, PACKING DRAWING Last Update: Oct 2013
    TO Tube Packing Drawing Last Update: Sep 2015
    TO Vacuum Packing Drawing Last Update: Sep 2015
    A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options Last Update : 05-Mar-2011
    A Revised MOSFET Model With Dynamic Temperature Compensation Last Update : 05-Mar-2011
    Shielded Gate PowerTrench® MOSFET Datasheet Explanation Last Update : 23-Oct-2014
    Introduction to Power MOSFETs and their Applications Last Update : 29-Mar-2016
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