FCP190N60E: N-Channel SuperFET® II Easy-Drive MOSFET 600V, 20.6A, 190mΩ

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Features

• 650V @T_J = 150°C
• Max. R_DS(on) = 190mΩ
• Ultra low gate charge ( Typ. Q_g = 63nC )
• Low effective output capacitance ( Typ. C_oss.eff = 178pF )
• 100% avalanche tested

Application Notes