FDB0190N807L: 80 V N-Channel PowerTrench® MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.

Features

• Max r_DS(on) = 1.7 mΩ at V_GS = 10 V, I_D = 34 A
  
• Max r_DS(on) = 2 mΩ at V_GS = 8 V, I_D = 31 A
  
• Fast Switching Speed
  
• Low Gate Charge
  
• High Performance Trench Technology for Extremely Low
• High Power and Current Handling Capability
  
• RoHS Compliant
  

Application Notes