FDB024N04AL7: N-Channel PowerTrench® MOSFET 40V, 219A, 2.4mΩ

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Features

• R_DS(on) = 2.0mΩ ( Typ.)@ V_GS = 10V, I_D = 80A
• Fast Switching Speed
• Low Gate Charge, Q_G = 84nC ( Typ.)
• High Performance Trench Technology for Extremely Low R_DS(on)
• High Power and Current Handling Capability
• RoHS Compliant

Application Notes