FDB120N10: N-Channel PowerTrench® MOSFET 100V, 74A, 12mΩ

This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Features

• R_DS(on) = 9.7mΩ ( Typ.) @ V_GS = 10V, I_D = 74A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low R_DS(on)
• High Power and Current Handling Capability
• RoHS Compliant

Application Notes