FDC5612: 60V N-Channel PowerTrench® MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Features

• 4.3 A, 60 V. R_DS(ON) = 0.055 Ω@ V_GS = 10 V
  
• R_DS(ON) = 0.064 Ω @ V_GS = 6 V
  
• Low gate charge (12.5nC typical)
  
• Fast switching speed
  
• High performance trench technology for extremely low R_DS(ON)
  
• SuperSOT™-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)
  

Application Notes