FDC610PZ: -30V P-Channel PowerTrench® MOSFET

This Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion.

Features

• Max r_DS(on) = 42mΩ at V_GS = -10V, I_D = -4.9A
• Max r_DS(on) = 75mΩ at V_GS = -4.5V, I_D = -3.7A
• Low gate charge (17nC typical).
• High performance trench technology for extremely low r_DS(on).
• SuperSOT™-6 package: small footprint (72% smaller than standard SO-8) low profile (1mm thick).
• RoHS compliant

Application Notes