FDC6303N: Digital FET, Dual N-Channel

These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this one N-Channel FET can replace several digital transistors with different bias resistors like the IMHxA series.

Features

• 25 V, 0.68 A continuous, 2 A Peak
  
• RDS(ON) = 0.6 Ω @ VGS = 2.7 V
  
• RDS(ON) = 0.45 Ω @ VGS= 4.5 V
  
• Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5 V
  
• Gate-Source Zener for ESD ruggedness. >6kV Human Body Model
  
• Replace multiple NPN digital transistors (IMHxA series) with one DMOS FET
  

Application Notes