FDC6401N: Dual N-Channel 2.5V Specified PowerTrench® MOSFET

This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Features

• 3.0 A, 20 V
  
• R_DS(ON) = 70 mΩ @ V_GS = 4.5 V
  
• R_DS(ON) = 95 mΩ @ V_GS = 2.5 V
  
• Low gate charge
  
• High performance trench technology for extremelylow R_DS(on)
  
• High power and current handling capability
  

Application Notes