FDC8886: 30V N-Channel Power Trench® MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance.

Features

• Max r_DS(on) = 23 mΩ at V_GS = 10 V, I_D = 6.5 A
  
• Max r_DS(on) = 36 mΩ at V_GS = 4.5 V, I_D = 6.0 A
  
• High performance trench technology for extremely low r_DS(on)
  
• Fast switching speed
  
• RoHS Compliant
  

Application Notes