FDD3510H: 80V Dual N & P-Channel PowerTrench® MOSFET

These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Features

• Q1: N-Channel
• Max r_DS(on) = 80m? at V_GS = 10V, I_D = 4.3A
  
• Max r_DS(on) = 88m? at V_GS = 6V, I_D = 4.1AQ2: P-Channel
  
• Max r_DS(on) = 190m? at V_GS = -10V, I_D = -2.8A
  
• Max r_DS(on) = 224m? at V_GS = -4.5V, I_D = -2.6A
  
• 100% UIL Tested
  
• RoHS Compliant
  

Application Notes