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Home > Fairchild Semiconductor > FET > FDD5N50NZF

FDD5N50NZF: N-Channel UniFETTM II FRFET® MOSFET 500V, 3.7A, 1.75Ω

UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. The body diode’s reverse recovery performance of UniFET II FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

FDD5N50NZF Datasheet
Features
  • RDS(on) = 1.47Ω ( Typ.)@ VGS = 10V, ID = 1.85A
  • Low gate charge ( Typ. 9nC)
  • Low Crss ( Typ. 4pF)
  • 100% avalanche tested
  • Improved dv/dt capability
  • ESD improved capability
  • RoHS compliant
Ordering Code
ProductProduct & Eco StatusUnit Price/1K OrderPacking Method ConventionPackage Marking Convention*
FDD5N50NZFTMFull Production Green as of Dec 2009  China RoHS$0.63TO-252 3L (DPAK)  -  2.285 x 6.54 x 9.905mm,  TAPE REEL
  • TO-252 3L (DPAK)  Drawing Last Update: Jun 2016
  • TO252-3L, JEDEC OPTION AA REEL PACKING DRAWING Last Update: Oct 2016
  • TO252-3L, PACKING DRAWING Last Update: May 2013
  • TO252-3L packing drawing Last Update: May 2013
Line 1$Y (Fairchild logo)
&Z (Plant Code)
&3 (3-Digit Date Code)
&K

Line 2FDD

Line 35N50NZF

Application Notes
  • AN-4163 Shielded Gate PowerTrench® MOSFET Datasheet Explanation Last Update : 23-Oct-2014
  • AN-9034 Power MOSFET Avalanche Guideline Last Update : 05-Mar-2011
  • AN-7510 A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options Last Update : 05-Mar-2011
  • AN-9010 MOSFET Basics Last Update : 09-Sep-2013
  • AN-9065 FRFET® in Synchronous Rectification Last Update : 28-Jun-2014
  • AN-7515 A Combined Single-Pulse and Repetitive UIS Rating System Last Update : 03-Mar-2011
  • AN-7533 A Revised MOSFET Model With Dynamic Temperature Compensation Last Update : 05-Mar-2011
  • AN-558 Introduction to Power MOSFETs and their Applications Last Update : 29-Mar-2016
  • AN-9005 Driving and Layout Design for Fast Switching Super-Junction MOSFETs Last Update : 26-Nov-2014
  • AN-9725 Robust Body Diode Characteristics of the Latest Power MOSFETs, UniFET™ II for Resonant Converters Last Update : 28-Jun-2014
  • FDD5N50NZF.pdf
    MOSFET Basics Last Update : 09-Sep-2013
    A Combined Single-Pulse and Repetitive UIS Rating System Last Update : 03-Mar-2011
    FRFET® in Synchronous Rectification Last Update : 28-Jun-2014
    Driving and Layout Design for Fast Switching Super-Junction MOSFETs Last Update : 26-Nov-2014
    Power MOSFET Avalanche Guideline Last Update : 05-Mar-2011
    Robust Body Diode Characteristics of the Latest Power MOSFETs, UniFET™ II for Resonant Converters Last Update : 28-Jun-2014
    TO-252 3L (DPAK)  Drawing Last Update: Jun 2016
    TO252-3L, JEDEC OPTION AA REEL PACKING DRAWING Last Update: Oct 2016
    TO252-3L, PACKING DRAWING Last Update: May 2013
    TO252-3L packing drawing Last Update: May 2013
    A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options Last Update : 05-Mar-2011
    A Revised MOSFET Model With Dynamic Temperature Compensation Last Update : 05-Mar-2011
    Shielded Gate PowerTrench® MOSFET Datasheet Explanation Last Update : 23-Oct-2014
    Introduction to Power MOSFETs and their Applications Last Update : 29-Mar-2016
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