FDD86102: 100V N-Channel PowerTrench® MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.

Features

• Max r_DS(on) = 24 mO at V_GS = 10 V, I_D = 8 A
  
• Max r_DS(on) = 38 mO at V_GS = 6 V, I_D = 6 A
  
• High performance trench technology for extremely low r_DS(on)
  
• High power and current handling capability in a widely used surface mount package
  
• Very low Qg and Qgd compared to competing trench technologies
  
• Fast switching speed
  
• 100% UIL tested
  
• RoHS Compliant
  

Application Notes