FDD86102LZ: 100V N-Channel PowerTrench® MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.

Features

• Max r_DS(on) = 22.5 mΩ at V_GS = 10 V, I_D = 8 A
  
• Max r_DS(on) = 31 mΩ at V_GS = 4.5 V, I_D = 7A
  
• HBM ESD protection level > 6 kV typical (Note 4)
  
• Very low Qg and Qgd compared to competing trenchtechnologies
  
• Fast switching speed
  
• 100% UIL tested
  
• RoHS Compliant
  

Application Notes