FDD86540: 60V, 50 A, 4.1 mΩ N-Channel PowerTrench® MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

Features

• Max rDS(on) = 4.1 mΩ at VGS = 10 V, ID = 21.5 A
• Max rDS(on) = 5 mΩ at VGS = 8 V, ID = 19.5 A
• 100% UIL tested
• RoHS Compliant

Application Notes