FDG313N: Digital FET, N-Channel

This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistor and small signal MOSFET.

Features

• 0.95 A, 25 V. R_DS(on) = 0.45 Ω @ V_GS = 4.5 V. R_DS(on) = 0.60 Ω @ V_GS = 2.7 V.
• Low gate charge (1.64 nC typical)
• Very low level gate drive requirements allowing directoperation in 3V circuits (V_GS(th)1.5V).
• Gate-Source Zener for ESD ruggedness(6kV Human Body Model).
• Compact industry standard SC70-6 surface mountpackage.

Application Notes