• 简体中文
  • English
  • MANUFACTURERS
  • PRODUCTS
  • SUPPORT
  • CONTACT
  • 简体中文
  • English
Home > Fairchild Semiconductor > FET > FDG313N

FDG313N: Digital FET, N-Channel

This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistor and small signal MOSFET.

FDG313N Datasheet
Features
  • 0.95 A, 25 V. RDS(on) = 0.45 Ω @ VGS = 4.5 V. RDS(on) = 0.60 Ω @ VGS = 2.7 V.
  • Low gate charge (1.64 nC typical)
  • Very low level gate drive requirements allowing directoperation in 3V circuits (VGS(th)1.5V).
  • Gate-Source Zener for ESD ruggedness(6kV Human Body Model).
  • Compact industry standard SC70-6 surface mountpackage.
Ordering Code
ProductProduct & Eco StatusUnit Price/1K OrderPacking Method ConventionPackage Marking Convention*
FDG313NFull Production Green as of Dec 2010  China RoHS$0.1466SC70 6L  -  1.1 x 1.25 x 2mm,  TAPE REEL
  • SC70 6L  Drawing Last Update: Aug 2015
  • SC70-6L T&R PACKING DRAWING Last Update: May 2013
  • SOT Tape and Reel Packing Drawing Last Update: Oct 2016
Line 1&Y (Binary Calendar Year Coding)

Line 2&. (Pin One)
13&G (Weekly Date Code)

Application Notes
  • AN-4163 Shielded Gate PowerTrench® MOSFET Datasheet Explanation Last Update : 23-Oct-2014
  • AN-9034 Power MOSFET Avalanche Guideline Last Update : 05-Mar-2011
  • AN-7510 A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options Last Update : 05-Mar-2011
  • AN-9010 MOSFET Basics Last Update : 09-Sep-2013
  • AN-9065 FRFET® in Synchronous Rectification Last Update : 28-Jun-2014
  • AN-7515 A Combined Single-Pulse and Repetitive UIS Rating System Last Update : 03-Mar-2011
  • AN-7533 A Revised MOSFET Model With Dynamic Temperature Compensation Last Update : 05-Mar-2011
  • AN-558 Introduction to Power MOSFETs and their Applications Last Update : 29-Mar-2016
  • AN-9005 Driving and Layout Design for Fast Switching Super-Junction MOSFETs Last Update : 26-Nov-2014
  • FDG313N.pdf
    Power MOSFET Avalanche Guideline Last Update : 05-Mar-2011
    MOSFET Basics Last Update : 09-Sep-2013
    A Combined Single-Pulse and Repetitive UIS Rating System Last Update : 03-Mar-2011
    FRFET® in Synchronous Rectification Last Update : 28-Jun-2014
    Driving and Layout Design for Fast Switching Super-Junction MOSFETs Last Update : 26-Nov-2014
    SC70 6L  Drawing Last Update: Aug 2015
    SC70-6L T&R PACKING DRAWING Last Update: May 2013
    SOT Tape and Reel Packing Drawing Last Update: Oct 2016
    Shielded Gate PowerTrench® MOSFET Datasheet Explanation Last Update : 23-Oct-2014
    A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options Last Update : 05-Mar-2011
    A Revised MOSFET Model With Dynamic Temperature Compensation Last Update : 05-Mar-2011
    Introduction to Power MOSFETs and their Applications Last Update : 29-Mar-2016
    Products 产品服务
    • 微处理器
    • 电源管理芯片
    • 存储器
    • 放大器和线性器件
    • 接口
    • 开关与多路复用器
    • 时钟
    • 数据转换器
    Manufacturers 生产厂家
    • ADI
    • Avago
    • Cypress
    • infineon
    • Linear
    • maxim
    • Microchip
    • NXP
    • ON
    • Panasonic
    • renesas
    • ROHM
    • ST
    • TI
    • TOSHIBA
    • Vishay
    Sales 联系购买
    • +微信:@BDTIC (二维码)
    • 手机号码:136 6222 1839
    • Email:bdtic@qq.com
    • About 关于我们
    • Business 商务合作
    • Careers 人才招聘
    • Sitemap 网站导航
    • Privacy 隐私条款
    ©1993 - 2025 BDTIC