FDG328P: P-Channel 2.5V Specified PowerTrench® MOSFET

This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications for a wide range of gate drive voltages (2.5V – 12V).

Features

• -1.5 A, -20 V
  
• R_DS(ON) = 0.145Ω @ V_GS = -4.5 V
  
• R_DS(ON) = 0.210Ω @ V_GS = -2.5 V
  
• Low gate charge
  
• High performance trench technology for extremelylow R_DS(ON)
  
• Compact industry standard SC70-6 surface mountpackage
  

Application Notes