FDG6306P: P-Channel 2.5V Specified PowerTrench® MOSFET

This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).

Features

• –0.6 A, –20 V.
  
• R_DS(ON)= 420 mΩ @ VGS = –4.5 V
  
• R_DS(ON) = 630 mΩ @ VGS = –2.5 V
  
• Low gate charge
  
• High performance trench technology for extremelylow R_DS(ON)
  
• Compact industry standard SC70-6 surface mountpackage
  

Application Notes