FDG8850NZ: 30V Dual N-Channel PowerTrench® MOSFET

This dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.

Features

• Max r_DS(on) = 0.4Ω at V_GS = 4.5V, I_D = 0.75A
• Max r_DS(on) = 0.5Ω at V_GS = 2.7V, I_D = 0.67A
• Very low level gate drive requirements allowing operationin 3V circuits(V_GS(th) <1.5V)
• Very small package outline SC70-6
• RoHS Compliant

Application Notes