FDMA008P20LZ: 20 V Single P-Channel PowerTrench® MOSFET

This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications.It features a MOSFET with low on-state resistance and zener diode protection against ESD. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.

Features

• Max r_DS(on) = 13 mΩ at V_GS = -4.5 V, I_D = -2.5 A
  
• Max r_DS(on) = 16 mΩ at V_GS = -2.5 V, I_D = -1.4 A
  
• Max r_DS(on) = 20 mΩ at V_GS = -1.8 V, I_D = -1.0 A
  
• Max r_DS(on) = 30 mΩ at V_GS = -1.5 V, I_D = -0.85 A
  
• Low Profile - 0.8 mm maximum in the new package MicroFET
• HBM ESD protection level > 1K V typical (Note 3)
  
• Free from halogenated compounds and antimony oxides
  
• RoHS Compliant
  

Application Notes