FDMA1024NZ: 20V Dual N-Channel PowerTrench® MOSFET

This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses.     The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.

Features

• Max r_DS(on) = 54 mΩ at V_GS = 4.5 V, I_D = 5.0 A
• Max r_DS(on) = 66 mΩ at V_GS = 2.5 V, _ID = 4.2 A
• Max r_DS(on) = 82 mΩ at V_GS= 1.8 V, I_D = 2.3 A
• Max r_DS(on) = 114 mΩ at V_GS = 1.5 V, I_D = 2.0 A
• HBM ESD protection level = 1.6 kV (Note 3)
• Low profile - 0.8 mm maximum - in the new packageMicroFET 2x2 mm
• RoHS Compliant
• Free from halogenated compounds and antimonyoxides

Application Notes