FDMA2002NZ: Dual N-Channel PowerTrench® MOSFET

This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 offers exceptional thermal performance for its physical size and is well suited to linear mode applications.

Features

• 2.9 A, 30
  
• R_DS(ON) = 123 mΩ @ V_GS = 4.5 V
  
• R_DS(ON) = 140 mΩ @ V_GS = 3.0 V
  
• R_DS(ON) = 163 mΩ @ V_GS = 2.5 V
  
• Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm
  
• HBM ESD protection level=1.8kV (Note 3)
  
• RoHS Compliant
  
• Free from halogenated compounds and antimonyoxides
  

Application Notes