FDMA410NZT: 20 V Ultra Thin N-Channel 1.5 V PowerTrench® MOSFET

This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe.

This design is similar to the FDMA410NZ, however it features our new advanced 0.55mm max 2x2 MLP package technology.

Features

• 0.55mm max package height MicroFET 2x2mm Package
  
• Max r_DS(on) = 23 mΩ at V_GS = 4.5 V, I_D = 9.5 A
  
• Max r_DS(on) = 29 mΩ at V_GS = 2.5 V, I_D = 8.0 A
  
• Max r_DS(on) = 36 mΩ at V_GS = 1.8 V, I_D = 4.0 A
  
• Max r_DS(on) = 50 m: at V_GS = 1.5 V, I_D = 2.0 A
  
• HBM ESD protection level >2.5 kV ( Note 3)
  
• Low Profile-0.8 mm maximum in the new package MicroFET 2x2 mm
  
• Free from halogenated compounds and antimony oxides
  
• RoHS Compliant
  

Application Notes