FDMC013P030Z: -30 V P-Channel PowerTrench® MOSFET

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been optimized for rDS(on), switching performance and ruggedness.

Features

• Max r_DS(on) = 7.0 mΩ at V_GS = -10 V, I_D = -14 A
• Max r_DS(on) = 12.0 mΩ at V_GS = -4.5 V, I_D = -10 A
• High Performance Trench Technology for Extremely Low r_DS(on)
• High Power and Current Handling Capability in a Widely Used Surface Mount Package
• Termination is Lead-free and RoHS Compliant
• HBM ESD Capability Level> 4 kV Typical (Note 4)

Application Notes